首页 >S90>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

S9004P2CT

30A SCHOTTKY BARRIER RECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDropForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionA

DIODESDiodes Incorporated

达尔科技

S9005P2CT

20A SCHOTTKY BARRIER RECTIFIER

Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection

DIODESDiodes Incorporated

达尔科技

S9011

TRANSISTOR竊?NPN 竊

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.31W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

S9011

NPN Silicon Epitaxial Planar Transistor

FEATURES ●CollectorCurrent.(IC=30mA) ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

S9011

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.31W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

S9011

NPN Silicon Epitaxial Planar Transistor

FEATURES ●CollectorCurrent.(IC=30mA) ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor.

DSK

Diode Semiconductor Korea

S9011

TRANSISTOR (NPN)

FEATURE Powerdissipation PCM:0.31W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

S9011

NPN Silicon Epitaxial Planar Transistor

FEATURES ●CollectorCurrent.(IC=30mA) ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

S9011

SILICON EPITAXIAL PLANAR TRANSISTOR

Features •CollectorCurrent.(IC=30mA) •Powerdissipation.(PC=200mW) MechanicalData •Case:SOT-23,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •Polarity:SeeDiagrams •Approx.Weight:0.008grams

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

S9011

Power dissipation

FEATURE Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

S9011LT1

TRANSISTOR竊?NPN 竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

S9011LT1-SOT-23

TRANSISTOR竊?NPN 竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

S9011-TO-92

TRANSISTOR竊?NPN 竊

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.31W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSOSTOR(PNP) FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

S9012

PNP General Purpose Transistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

S9012

PNP Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=-500mA) ●ComplementaryToS9013. ●ExcellentHFELinearity. APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●ComplementarytoS9013 ●ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

S9012

TRANSISTOR(PNP)

FEATURES •ComplementarytoS9013 •ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

S9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheS9012isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •Hightotalpowerdissipation.(PT:625mW) •Highcollectorcurrent.(IC:500mA) •ComplementarytoS9013 •Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

S9012

PNP Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=-500mA) ●ComplementaryToS9013. ●ExcellentHFELinearity. APPLICATIONS ●HighCollectorCurrent.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

详细参数

  • 型号:

    S90

  • 制造商:

    DIODES

  • 制造商全称:

    Diodes Incorporated

  • 功能描述:

    30A SCHOTTKY BARRIER RECTIFIER

供应商型号品牌批号封装库存备注价格
HAMAMATSU
2017+
DIP3
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
23+
N/A
49000
正品授权货源可靠
询价
NEWCHIP
MSOP8
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
NEWCHIP
23+
MSOP8
28611
只做原装,专为终端工厂服务,BOM全配。
询价
HAMAMATSU
2309+
DIP-3
8293
原装现货!随时可以看货!天天特价!
询价
HAMAMATSU
2316+
DIP3
3689
优势代理渠道,原装现货,可全系列订货
询价
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
FREESCALE
23+
QFN20
50000
全新原装正品现货,支持订货
询价
FREESCALE
2122+
QFN20
18009
全新原装正品,优势渠道,价格美丽可做含税
询价
FREESCALE/NXP
QFN20
12000
原装现货,长期供应,终端账期支持
询价
更多S90供应商 更新时间2024-5-17 16:57:00