S599

POWER LED @150mA Current

S5990-01

POSITION SENSITIVE DETECTOR

[HAMAMATSU] WhatisPSD? Variousmethodsareavailablefordetectingthepositionofincidentlight.Theseincludemethodsusingsmalldiscretedetectorarraysormulti-elementsensorssuchasCCDsensors.Incontrasttothesesensors,PSDs(PositionSensitiveDetectors)arecomprisedofamonol

S5990-01

Two-dimensional PSD Improved tetra-lateral type for surface mounting

Two-dimensionalPSD Improvedtetra-lateraltypeforsurfacemounting Features ●Largeactivearea S5990-01:4×4mm S5991-01:9×9mm ●Chipcarrierpackageforsurfacemounting (automaticmountingwithsolderreflow) thinpackage:1.26mmt ●Improvedtetra-lateraltype

S5991-01

POSITION SENSITIVE DETECTOR

[HAMAMATSU] WhatisPSD? Variousmethodsareavailablefordetectingthepositionofincidentlight.Theseincludemethodsusingsmalldiscretedetectorarraysormulti-elementsensorssuchasCCDsensors.Incontrasttothesesensors,PSDs(PositionSensitiveDetectors)arecomprisedofamonol

S5991-01

Two-dimensional PSD Improved tetra-lateral type for surface mounting

Two-dimensionalPSD Improvedtetra-lateraltypeforsurfacemounting Features ●Largeactivearea S5990-01:4×4mm S5991-01:9×9mm ●Chipcarrierpackageforsurfacemounting (automaticmountingwithsolderreflow) thinpackage:1.26mmt ●Improvedtetra-lateraltype

S5991-01

原装正品价格优惠

599PWC

5MMLED

BF599

EPITAXIALPLANARNPNTRANSISTOR

BF599

EPITAXIALPLANARNPNTRANSISTOR(HIGHFREQUENCY,VHFBANDAMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

BF599

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BF599

NPNSiliconRFTransistor(CommonemitterIF/RFamplifierLowfeedbackcapacitanceduetoshielddiffusion)

NPNSiliconRFTransistor ●CommonemitterIF/RFamplifier ●Lowfeedbackcapacitanceduetoshielddiffusion

BF599

2SC3229

C599

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

J599

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=75mΩMAX.(VGS=–10V,ID=–10A) RDS(on)2=111mΩMAX.(VGS=–4.0V,ID=–10A) •Lowinputcapacitance: Ciss=13

KTK599TV

NCHANNELJUNCTIONFIELDEFFECTTRANSISTORCONDENSERMICROPHONEAPPLICATION

CONDENSERMICROPHONEAPPLICATION FEATURES •SpeciallySuitedforUseinAudioandTelephone ElectretCapacitorMicrophones(ECM) •HighVoltageGain •HighESDVoltage •Ultra-SmallandThinSizePackage •Built-inTVS&10pFCapacitorbetweenOUTPUTtoGND IEC61000-4-2(ESD)15kV

LB599AD

High-voltageresonantcontroller

Devicedescription TheL6599isadouble-endedcontrollerspecificfortheresonanthalf-bridgetopology.Itprovides50complementarydutycycle:thehigh-sideswitchandthelow-sideswitcharedrivenON180°out-of-phaseforexactlythesametime. Outputvoltageregulationisobtainedbymodu

LB599D

High-voltageresonantcontroller

Devicedescription TheL6599isadouble-endedcontrollerspecificfortheresonanthalf-bridgetopology.Itprovides50complementarydutycycle:thehigh-sideswitchandthelow-sideswitcharedrivenON180°out-of-phaseforexactlythesametime. Outputvoltageregulationisobtainedbymodu

NTE599

SiliconRectifierUltraFast,200V,15A

Description: TheNTE599isasiliconrectifierina2–LeadTO220typepackagedesignedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes. Features: ●Ultrafast35nsRecoveryTime ●175°COperatingJunctionTemperature ●PopularTO220Package ●VoltageCapacityto200

OP599

NPNPlasticSiliconPhototransistors

Description TheOP599seriesphototransistorconsistsofanNPNsiliconphototransistormountedinadarkblueplasticinjectionmoldedshellpackage.Thenarrowreceivingangleprovidesexcellenton-axiscoupling.Thesensorsare100productiontestedforclosecorrelationwithOptekGaAlAsem

OP599

NPNSiliconPhototransistor