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S29GL512N10TFI023规格书详情
512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.
Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
— 3 volt read, erase, and program operations
■ Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ Manufactured on 110 nm MirrorBit process technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
Performance Characteristics
■ High performance
— 90 ns access time (S29GL128N, S29GL256N)
— 100 ns (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software & Hardware Features
■ Software features
— Program Suspend and Resume: read other sectors before programming operation is completed
— Erase Suspend and Resume: read/program other sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion
产品属性
- 型号:
S29GL512N10TFI023
- 制造商:
Spansion
- 功能描述:
NOR Flash Parallel 3.3V 512Mbit 64M/32M x 8bit/16bit 100ns 56-Pin TSOP T/R
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SPANSIO |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SPANSION |
11+ |
BGA64 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SPANSION |
BGA |
5350 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SPANSION |
2022 |
BGA |
283 |
原装库存特价销售 |
询价 | ||
SPANSION |
2018+ |
BGA |
30617 |
一级代理全新原装热卖 |
询价 | ||
SPANSION |
22+23+ |
BGA |
18049 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SPANSION |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SPANSION |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
SPANSION |
21+ |
TSOP56 |
35200 |
一级代理/放心采购 |
询价 | ||
SPANSION |
2016+ |
BGA |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
询价 |