首页 >RURD410CCS>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
FixedAttenuators(N,BNC,TNC) | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE | ||
50ohmswidevarietiesstandardconnectors | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
CompressionStyleRingTongueTerminal | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 | ||
CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 | ||
CompressionStyleRingTongueTerminal | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 | ||
ActiveBiasController ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100µAto20mA ●IdealsupplementforSiegetandothertrans | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ActiveBiasController ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100µAto20mA ●IdealsupplementforSiegetandothertrans | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ActiveBiasController | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNEPITAXIALSILICONPOWERTRANSISTOR NPNEPITAXIALSILICONPOWERTRANSISTOR TO-126 PlasticPackage | CDIL CDIL | CDIL |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
HARRIS |
22+23+ |
TO252 |
73881 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HARRIS/哈里斯 |
2022 |
TO252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
HARRIS/哈里斯 |
23+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
5000 |
公司存货 |
询价 | |||||
Fairchild/In |
23+ |
TO-252 |
9500 |
专业优势供应 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INTERSIL |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
哈利斯 |
2020+ |
TO-252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 |
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