首页 >RT8011APQW>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Cat.5AudioTransmitter/Receiver | LVL1 Level One | LVL1 | ||
2-channelstep-down,step-up,orinvertinguseDC-DCconvertercontrolIC | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
8-LineEMIFilterwithIntegratedESDProtection | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
8-LineEMIFilterwithIntegratedESDProtection | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage -VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.125Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW | ||
FOURCHANNEL3.125GIGABITETHERNETCMOSTRANSCEIVER | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
FOUR-CHANNEL3.125GIGABITETHERNETCMOSTRANSCEIVER | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
SiGe:CLowNoiseAmplifierMMICforGPS,GLONASS,GalileoandCompass | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
HighPerformanceResonantModeController | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighPerformanceResonantModeController | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LIne-ControlledIntegratedCircuitLEDControlIntegratedCircuit | CYTChangyuntong Semiconductor Technology Co., Ltd. 长运通深圳市长运通半导体技术有限公司 | CYT |
详细参数
- 型号：
RT8011APQW
- 制造商：
RICHTEK
- 功能描述：
DC/DC(IC)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RICHTEK |
2020+ |
WDFN-8 |
55800 |
原装现货/假一罚十/可开增票 |
询价 | ||
RICHTEK |
2016+ |
WDFN8 |
26535 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
RICHTEK |
22+ |
QFN |
10000 |
原装正品优势供应 |
询价 | ||
RICHTEK |
23+ |
QFN |
403 |
正规渠道,只有原装! |
询价 | ||
RICHTEK/立锜 |
23+ |
WDFN-8 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
询价 | ||
RICHTEK/立锜 |
QFN |
7906200 |
询价 | ||||
RICHTEK/立锜 |
23+ |
QFN |
56000 |
公司只做原装,支持订货,诚信经营 |
询价 | ||
RICHTEK/立锜 |
2405+ |
QFN |
4475 |
只做原装正品渠道订货 |
询价 | ||
RICHTEK |
13+ |
2902 |
原装分销 |
询价 | |||
RICHTEK |
2016+ |
WDFN8 |
6523 |
只做进口原装现货!假一赔十! |
询价 |
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