| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 赛恩半导体深圳市赛恩半导体有限公司 | SISEMIC | ||
Reducedswitchingandconductionlosses | VishayVishay Siliconix 威世科技 | Vishay | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: -Motorcontrols -Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: -Motorcontrols -Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: -Motorcontrols -Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
瑞森 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
REASUNOS |
1948+ |
TO-220F |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
REASUNOS(瑞森) |
2112+ |
TO-220F |
105000 |
10个/袋一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
瑞森 |
22+ |
TO-220F |
50000 |
原装正品.假一罚十 |
询价 | ||
REASUNOS(瑞森) |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
瑞森 |
23+ |
TO-220F |
6000 |
订货 |
询价 | ||
REASUNOS |
22+ |
TO-220F |
130000 |
瑞森微代理,支持终端生产 |
询价 | ||
REASUNOS(瑞森半导体) |
23+ |
TO220F |
6000 |
询价 | |||
一级代理 |
23+ |
N/A |
59000 |
一级代理放心采购 |
询价 | ||
REASUNOS |
24+25+/26+27+ |
TO-220-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- RS1D
- RS5C372A
- RS5C62
- RS8973EPF
- RT9161-25CX
- RT9161A-33CG
- RT9167-18CB
- RT9167-33CB
- RT9173CS
- RT9202
- RT9224CS
- RT9266CE
- RT9602CS
- RT9701PB
- RTC4553A
- RTC58321A
- RTC58321B
- RTC62421B
- RTC62423A
- RTC63423A
- RTC6593
- RTC72421B
- RTC72423A
- RTL8019AS
- RTL8029
- RTL8100
- RTL8100BL
- RTL8100CL
- RTL8101L
- RTL8139B
- RTL8139CL
- RTL8180L
- RTL8201BL
- RTL8201L
- RTL8208
- RTL8305S
- RTL8305SC
- RTL8308B
- RTL8316
- RTL8801B
- RV4145AN
- RX3310A
- RYC8220-2M
- RYT113432
- S102983
相关库存
更多- RS5C348A-E2
- RS5C372A-E2
- RS5C62-E2
- RT34063ACS
- RT9161-33CX
- RT9162-33CX
- RT9167-30CB
- RT9173
- RT9181CB
- RT9202CS
- RT9227ACS
- RT9271CE
- RT9701CB
- RT9801BCE
- RTC-4574JEB
- RTC58321AA
- RTC62421A
- RTC62423
- RTC63423
- RTC64613A
- RTC72421A
- RTC72423
- RTL8009
- RTL8019AS-LF
- RTL8029AS
- RTL8100B
- RTL8100C
- RTL8100L
- RTL8139A
- RTL8139C
- RTL8139D
- RTL8201
- RTL8201BL-LF
- RTL8204
- RTL8208B
- RTL8305SB
- RTL8308
- RTL8309SB
- RTL8801
- RV4141AM
- RX3140
- RX3400
- RYT113431
- S101D01
- S1053
