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RN2313

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuitandDriverCircuit ●Withbuilt-inbiasresistors. ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocessandminiaturizeequipment. ●Variousresistancevaluesareavailabletosuitvariouscircuitdesigns. ●Complement

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

RN2313(TE85L,F)

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SC-70,SOT-323 类别:分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 描述:TRANS PREBIAS PNP 50V 0.1A USM

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

RN2313,LF

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SC-70,SOT-323 类别:分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 描述:PB-F BIAS RESISTOR BUILT-IN TRAN

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

AM2313

MOSFETP-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AM2313P

P-ChannelLogicLevelMOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AnalogPower

Analog Power

AP2313GN-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

APM2313

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

APM2313A

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

APM2313AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

ATTINY2313

8-bitAVRMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

DataandNon-volatileProgramandDataMemories

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A-MMH

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

晶体管资料

  • 型号:

    RN2313

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+R

  • 性质:

    表面帖装型 (SMD)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    50V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    DTA144TU,

  • 最大耗散功率:

    0.4W

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    50

  • htest:

    999900

  • atest:

    .1

  • wtest:

    .4

详细参数

  • 型号:

    RN2313

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    TOSHIBA Transistor Silicon PNP Epitaxial Type(PCT Process)

供应商型号品牌批号封装库存备注价格
TOSHIBA
2008++
SOT-323
9100
新进库存/原装
询价
TOSHIBA
2023+
SOT-323
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
只做原装
21+
SOT-323
36520
一级代理/放心采购
询价
TOSHIBA
1923+
SOT-323
35689
绝对进口原装现货库存特价销售
询价
TOSHIBA/东芝
SOT-323
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
TOSHIBA/东芝
23+
SOT-323
89630
当天发货全新原装现货
询价
TOSHIBA/东芝
23+
SOT-323
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
TOSHIBA
11+
39000
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
最新
20942
原装正品 现货供应 价格优
询价
更多RN2313供应商 更新时间2024-6-5 15:30:00