[Raytheon RF Components]

Description

The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.

Features

◆ 2-18 GHz Bandwidth

◆ 24 dB Typical Gain

◆ ±2 dB Gain Flatness

◆ 20 dBm Output Power Typical

◆ Three Stages of Distributed Amplification

◆ Gain Control of up to 70 dB range

◆ Dual-Gate Ion-Implanted 0.5 µm FETs

◆ Chip Size: 4.14mm x 3.22mm x 0.1mm