Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

 Logic level operation (4 V Gate drive).

 Built-in the over temperature shut-down circuit.

 High endurance capability against to the short circuit.

 Latch type shut down operation (need 0 voltage recovery).

 Built-in the current limitation circuit.

 Power supply voltage applies 12 V.

 AEC-Q101 Compliant.

 Endurance capability against to ESD.