首页 >RFSA2013SQ>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
10Base-TInterfaceModule | PCA PCA Electronics, Inc. | PCA | ||
VOLTAGECONTROLLEDATTENUATOR | RFMD RF Micro Devices | RFMD | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOMRecom International Power 瑞科电源瑞科电源有限公司 | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOMRecom International Power 瑞科电源瑞科电源有限公司 | RECOM | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
AdaptiveallocationandscalingforPASCcodinginDCCsystems GENERALDESCRIPTION TheSAA2013performstheadaptiveallocationandscalingfunctioninthePrecisionAdaptiveSub-bandCoding(PASC)system.Itisnotrequiredinplaybackonlyapplications,andisonlyusedduringrecording.TocompletethePASCprocessor,aSAA2003stereofilterandcodecis | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
AdaptiveallocationandscalingforPASCcodinginDCCsystems GENERALDESCRIPTION TheSAA2013performstheadaptiveallocationandscalingfunctioninthePrecisionAdaptiveSub-bandCoding(PASC)system.Itisnotrequiredinplaybackonlyapplications,andisonlyusedduringrecording.TocompletethePASCprocessor,aSAA2003stereofilterandcodecis | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
3phiInverted-coneLEDforsurfaceillumination 3φInverted-coneLEDforsurfaceillumination | SankenSanken Electric Co Ltd. 三垦日本三垦 | Sanken | ||
3phiInverted-ConeLEDs(forlighting-panelsandillumination) | SankenSanken Electric Co Ltd. 三垦日本三垦 | Sanken | ||
ShieldedPowerInductor??SER2000 | COILCRAFTCoilcraft 线艺 | COILCRAFT | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GaAsN-channelDual-GateMESFET Description TheSGM2013NisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular/cordlessphone. Features •Ultra-smallpackage •Lowvoltageoperation •LownoiseNF=1.4dB(Typ)at900MHz,NF=1. | SonySONY 索尼 | Sony | ||
300mA,LowPower,LowDropout,3-Terminal,LinearRegulators GENERALDESCRIPTION TheSGM2013low-power,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto300mA.Theyareperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(200µAat300mAoutput)makesthemattractiveforbatter | SGMICROSG Micro Corp 圣邦圣邦微电子(北京)股份有限公司 | SGMICRO | ||
GaAsN-channelDual-GateMESFET Description TheSGM2013NisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular/cordlessphone. Features •Ultra-smallpackage •Lowvoltageoperation •LownoiseNF=1.4dB(Typ)at900MHz,NF=1. | SonySONY 索尼 | Sony | ||
P-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
QORVO |
17+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
RFMD |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | ||
QORVO |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
QORVO |
21+ |
QFN-16 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RFMD |
1247 |
25 |
公司优势库存 热卖中! |
询价 | |||
QORVO |
15+ |
QFN-16 |
33 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
QORVO |
15+ |
QFN-16 |
33 |
只做原装,也只有原装! |
询价 | ||
QORVO |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
QORVO |
2023+ |
QFN-16 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
QORVO |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 |
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