首页 >RFP30N06LE>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
RFP30N06LE | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Description TheRFP30N06LE,RF1S30N06LEandRF1S30N06LESMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theywere | HARRIS HARRIS corporation | ||
RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
RFP30N06LE | N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
30Amps,60VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
60V,30AN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
60VN-ChannelEnhancementModePowerMOSFET Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired | UMWUMW 友台友台半导体 | |||
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
25A竊?0VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | |||
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies, | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
详细参数
- 型号:
RFP30N06LE
- 功能描述:
MOSFET TO-220AB N-Ch Power
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL/FSC |
23+ |
TO-220 |
28610 |
询价 | |||
FAI |
400 |
询价 | |||||
FSC进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
Fairchild |
23+ |
TO-220AB |
7750 |
全新原装优势 |
询价 | ||
HARRIS |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
HARRIS |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
fsc |
dc11 |
原厂封装 |
400 |
INSTOCK:50/tube/to220 |
询价 | ||
FSC |
23+ |
RFP30N06LE |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
23+ |
N/A |
30050 |
正品授权货源可靠 |
询价 |
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