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14N05

FastSwitching

FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=50V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) •FastSwitching APPLICATIONS •Switchregulators •Switchingconvertersmotordriversandrelaydrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

14N05L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05L

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWUMW

友台友台半导体

RFD14N05LSM

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWUMW

友台友台半导体

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05SM

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
UMW(友台半导体)
1年内
TO-252
150000
友台代理商 共奕芯城一站式元器件采购平台 自助下单 w
询价
FAIRCHILD/仙童
23+
SOT252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
SOT252
22+
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
23+
SOT252
6000
原装正品,支持实单
询价
FAIRCHILD/仙童
22+
SOT252
25000
只做原装进口现货,专注配单
询价
FAIRCHILD/仙童
23+
SOT252
8000
只做原装现货
询价
HARRIS
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
FAI
40000
询价
FAI
2017+
TO252
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
F
24+
TO-252AA
5000
只做原装公司现货
询价
更多RFD14N05LSM(UMW)供应商 更新时间2024-5-20 14:44:00