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RD28F1602C3BD70中文资料PDF规格书
RD28F1602C3BD70规格书详情
Introduction
This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in the following combinations:
• 32-Mbit flash + 8-Mbit SRAM
• 32-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash memory + 2-Mbit SRAM
Product Overview
The C3 SCSP device combines flash memory and SRAM into a single package, which provides secure low-voltage memory solutions for portable applications.
The flash memory provides the following features:
• Enhanced security.
• Instant locking/unlocking of any flash block with zero-latency
• A 128-bit protection register that enables unique device identification,
to meet the needs ofnext generation portable applications.
• Improved 12 V production programming for increased factory throughput.
Product Features
■ Flash Memory Plus SRAM
—Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
■ SCSP Technology
—Smallest Memory Subsystem Footprint
—Area : 8 x 10 mm for 16 Mbit (0.13 µm)
Flash + 2 Mbit or 4 Mbit SRAM
—Area : 8 x 12 mm for 32 Mbit (0.13 µm)
Flash + 4 Mbit or 8 Mbit SRAM
—Height : 1.20 mm for 16 Mbit (0.13 µm)
Flash + 2 Mbit or 4 Mbit SRAM, and 32
Mbit (0.13um) Flash + 8 Mbit SRAM
—Height : 1.40 mm for 32 Mbit (0.13 µm)
Flash + 4 Mbit SRAM
—This Family also includes 0.25 µm, 0.18
µm, and 0.13 µm technologies
■ Advanced SRAM Technology
—70 ns Access Time
—Low Power Operation
—Low Voltage Data Retention Mode
■ Intel® Flash Data Integrator (FDI) Software
—Real-Time Data Storage and Code
Execution in the Same Memory Device
—Full Flash File Manager Capability
■ Advanced+ Boot Block Flash Memory
—70 ns Access Time
—Instant, Individual Block Locking
—128 bit Protection Register
—12 V Production Programming
—Fast Program and Erase Suspend
—Extended Temperature –25 °C to +85 °C
■ Blocking Architecture
—Block Sizes for Code + Data Storage
—4-Kword Parameter Blocks
—64-Kbyte Main Blocks
—100,000 Erase Cycles per Block
■ Low Power Operation
—Asynchronous Read Current: 9 mA (Flash)
—Standby Current: 7 µA (Flash)
—Automatic Power Saving Mode
■ Flash Technologies
—0.25 µm ETOX™ VI, 0.18 µm ETOX™
VII and 0.13 µm ETOX™ VIII Flash
Technologies
产品属性
- 型号:
RD28F1602C3BD70
- 制造商:
INTEL
- 制造商全称:
Intel Corporation
- 功能描述:
3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTEL |
2020+ |
(BGA) |
3028 |
全新原装现货库存,超低价清仓! |
询价 | ||
INTEL/英特尔 |
2024+实力库存 |
BGA |
2 |
只做原厂渠道 可追溯货源 |
询价 | ||
INTEL |
21+ |
BGA |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
INTEL/英特尔 |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
询价 | ||
只做原装 |
21+ |
BGA |
36520 |
一级代理/放心采购 |
询价 | ||
INTEL |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
INTEL |
22+23+ |
TSOP |
35464 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INTEL |
503 |
BGA |
1654 |
全新原装现货100真实自己公司 |
询价 | ||
INTEL |
2KReel |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INTEL/英特尔 |
1948+ |
BGA |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 |