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RC48F4400P0UBU0中文资料PDF规格书
RC48F4400P0UBU0规格书详情
Introduction
This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.
Product Features
High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)
产品属性
- 型号:
RC48F4400P0UBU0
- 制造商:
NUMONYX
- 制造商全称:
Numonyx B.V
- 功能描述:
StrataFlash㈢ Cellular Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTEL/英特尔 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INTEL |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
INTEL |
22+ |
BGA |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
Micron |
2020+ |
50000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
micron(镁光) |
EASYBGA-64(8x10) |
144 |
询价 | ||||
Micron Technology Inc. |
21+ |
64-EasyBGA(8x10) |
56200 |
一级代理/放心采购 |
询价 | ||
INTEL/英特尔 |
23+ |
NA/ |
154 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INTEL |
21+ |
No |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INTEL/英特尔 |
2122+ |
BGA |
9890 |
全新原装进口,优势渠道,价格美丽,可出样品来电咨询 |
询价 |