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RC28F128J3F75A中文资料PDF规格书

RC28F128J3F75A
厂商型号

RC28F128J3F75A

功能描述

Numonyx짰 Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

页面数量

66

生产厂商 Micron Technology Inc.
企业简称

Micron镁光

中文名称

美国镁光科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-5-19 17:08:00

RC28F128J3F75A规格书详情

Introduction

This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx® Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

产品属性

  • 型号:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    StrataFlash™

  • 标准包装:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 异步

  • 存储容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并联

  • 电源电压:

    2.2 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    48-VFBGA

  • 供应商设备封装:

    48-VFBGA(6x8)

  • 包装:

    带卷(TR)

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
BGA
6998
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
INTEL
22+23+
FBGA64
35271
绝对原装正品全新进口深圳现货
询价
micron(镁光)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
MICRON
BGA
58209
16余年资质 绝对原盒原盘 更多数量
询价
INTEL
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MICRON/镁光
21+
BGA
6880
只做原装
询价
Micron
17+
6200
询价
BGA
21+
MIC
12588
原装正品,自己库存 假一罚十
询价
MICRON
23+
BGA
10000
原装正品价格特优--只做原装
询价
MICRON/美光
23+
BGA64
10000
优势代理渠道,原装正品,可全系列订货开增值税票
询价