DG3002DB

Low-VoltageSub-OhmSPST/SPDTMICROFOOTAnalogSwitch

DESCRIPTION TheDG3001,DG3002,DG3003aremonolithicCMOSanalogswitchesdesignedforhighperformanceswitchingofanalogsignals.TheDG3001andDG3002areconfiguredasSPSTswitches,andtheDG3003isanSPDTswitch.Combininglowpower,highspeed(tON:47ns,tOFF:40ns),lowon-resist

DMT3002LPS

30VN-CHANNELENHANCEMENTMODEMOSFET

DMT3002LPS

30VN-CHANNELENHANCEMENTMODEMOSFETPowerDI

Description ThisnewgenerationN-ChannelEnhancementModeMOSFETisdesignedtominimizeRDS(ON),yetmaintainsuperiorswitchingperformance.Thisdeviceisidealforuseinpowermanagementandloadswitch. Features •ThermallyEfficientPackage–CoolerRunningApplications •

DMTH3002LPS

30V175째CN-CHANNELENHANCEMENTMODEMOSFET

DMTH3002LPS

30V175CN-CHANNELENHANCEMENTMODEMOSFET

E3002S

2C227/30BCFLEXFLEXSound,Alarm&SecurityCable

EG3002

SinglechannelMOSFETdrivechip

EPZ3002G

PowerChoke

ER3002PT

ISOLATIONSUPERFASTRECOVERYRECTIFIER

F3002

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

F3002TERU

F3000TERUSERIES

FDR3002

35AMPSILICONAUTOMOTIVEDISHRECIFIERS

FJX3002R

SwitchingApplication

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=10KΩ,R2=10KΩ) •ComplementtoFJX4002R

FJY3002R

NPNEpitaxialSiliconTransistor

Features •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=10KΩ,R2=10KΩ) •ComplementtoFJY4002R

FJY3002R

NPNEpitaxialSiliconTransistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=10kΩ,R2=10kΩ) Application •Switching,Interface,and

FKBA3002

SingleN-ChannelMOSFET

Features AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications PowerManagementinDesktopComputeror DC/DCConverters. IsolatedDC/DCConvertersinTelecomand Industrial.

FKBB3002

N-Ch30VFastSwitchingMOSFETs

Description TheFKBB3002isthehighcelldensitytrenched N-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKBB3002meettheRoHSandGreen Productrequirement,100EASguaranteedwith fullfunctionreliabilityapprove

FKD3002

N-Ch30VFastSwitchingMOSFETs

Description TheFKD3002isthehighcelldensitytrenched N-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKD3002meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved.

FKK3002

N-Ch30VFastSwitchingMOSFETs

Description TheFKK3002isthehighcelldensitytrenched N-chMOSFETs,whichprovidesexcellent RDSONandefficiencyformostofthesmall powerswitchingandloadswitchapplications. TheFKK3002meettheRoHSandGreen Productrequirement,withfullfunctionreliability approved.

FKL3002

N-Ch30VFastSwitchingMOSFETs

Description TheFKL3002isthehighcelldensitytrenched N-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKL3002meettheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.