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AOI414	文件：330.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT414	文件：288.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT414	文件：331.54 Kbytes Page：7 Pages	100VN-channelMOSFET	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOU414	文件：69.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOU414	文件：352.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOU414L	文件：69.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AQV414	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414A	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AQV414AX	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414AZ	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQV414E	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS

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产品属性

产品编号：
PVU414S
制造商：
Infineon Technologies
类别：
继电器 > 固态继电器
系列：
PVU, HEXFET®
包装：
管件
安装类型：
表面贴装型
电路：
SPST-NO（1 Form A）
输出类型：
AC，DC
电压 - 输入：
1.2VDC
端接样式：
鸥翼
封装/外壳：
6-SMD（0.300"，7.62mm）
供应商器件封装：
6-SMT
描述：
SSR RELAY SPST-NO 140MA 0-400V

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明盛嘉电子科技有限公司	PVU414S	IR	21+	DIP6SOP6	5000	原装现货/假一赔十/支持第三方检验	询价
深圳市昌和盛利电子有限公司	PVU414S	IR	23+	SOP6P	8238		询价
深圳好佳好科技有限公司	PVU414S	IOR	1305+	SOP-6	12000	公司特价原装现货	询价
深圳市一线半导体有限公司	PVU414S	IOR	0341+	SOP-6	110		询价
深圳市锦达世纪科技有限公司	PVU414S	IR	04+		2000		询价
深圳市博浩通科技有限公司	PVU414S	IR	23+	SOP-6	9960	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
深圳市卓越微芯电子有限公司	PVU414S	IR	2020+	SMD-6	27	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	PVU414S	IOR	2339+	SOP6	5989	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市欧立现代科技有限公司	PVU414S	IR	22+	SOP6P	6868	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	PVU414S	IR	24+	1310	5000	全现原装公司现货	询价

更多PVU414S供应商更新时间2024-5-24 13:45:00

产品属性

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