PTF180101

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description ThePTF180101isa10W,internally–matchedGOLDMOSFETdeviceintendedforEDGEapplicationsintheDCS/PCSband.Fullgoldmetallization ensuresexcellentdevicelifetimeandreliability. Features •TypicalEDGEperformance -Averageoutputpower=4.0W -Gain=19.0dB

PTF180101M

High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz

Description ThePTF180101Misanunmatched10-wattGOLDMOS®FETintendedforclassABbasestationapplicationsinthe1to2GHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features •TypicalEDGEperformance -Averageoutputpo

PTF180101S

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description ThePTF180101isa10W,internally–matchedGOLDMOSFETdeviceintendedforEDGEapplicationsintheDCS/PCSband.Fullgoldmetallization ensuresexcellentdevicelifetimeandreliability. Features •TypicalEDGEperformance -Averageoutputpower=4.0W -Gain=19.0dB

PTF180101S

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Description ThePTF180101isa10W,internally–matchedGOLDMOSFETdeviceintendedforEDGEapplicationsintheDCS/PCSband.Fullgoldmetallization ensuresexcellentdevicelifetimeandreliability. Features •TypicalEDGEperformance -Averageoutputpower=4.0W -Gain=19.0dB

PTF180101M V1

包装：带 封装/外壳：10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC FET RF LDMOS 10W TSSOP-10

PTF180101S V1

包装：带 封装/外壳：H-32259-2 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 1.99GHZ H-32259-2