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PSHM40-06

CoolMOS Power MOSFET

POWERSEM

Powersem GmbH,

ABAS40-06-HF

SmallSignalSchottkyDiodes

Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1. -AEC-Q101Qualified. -Lowforwardvoltageschottkyrectifier.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BAS40-06

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAS40-06

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAS40-06

SiliconSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BAS40-06

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BAS40-06

TECHNICALSPECIFICATIONSOFSURFACEMOUNTSCHOTTKYBARRIERDIODES

VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD).

DCCOM

Dc Components

BAS40-06

SurfaceMountSchottkyBarrierDiodes

WEITRON

Weitron Technology

BAS40-06

200mW,LowVF,SMDSchottkyBarrierDiode

FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

BAS40-06

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BAS40-06

SchottkyDiodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

BAS40-06

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODES

Diodes Incorporated

BAS40-06

SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BAS40-06

SurfaceMountSchottkyBarrierDiodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

VishayVishay Siliconix

威世科技威世科技半导体

BAS40-06

SCHOTTKYarraySERIES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

BAS40-06

SurfacemountSchottky-BarrierSingle-/Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

Diotec

Diotec Semiconductor

BAS40-06

SurfaceMountSchottkyBarrierDiodes

Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite

WEITRON

Weitron Technology

BAS40-06

Surfacemountschottkybarrierdiode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BAS40-06

SCHOTTKYDIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BAS40-06

General-purposeSchottkydiodes

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

详细参数

  • 型号:

    PSHM40-06

  • 制造商:

    POWERSEM

  • 制造商全称:

    POWERSEM

  • 功能描述:

    CoolMOS Power MOSFET

供应商型号品牌批号封装库存备注价格
TDK/东电化
2021+
N
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TDK
21+
SMD
9866
询价
TDK
23+
NA
200
齿轮传感器
询价
MMC
2023+
TQFP
50000
原装现货
询价
DATEL
23+
MODULE
6866000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MMC
23+
QFP160
13
询价
N/A
2023+环保现货
模块
1
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
CONDOR
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
NEC
23+
DIP
2000
全新原装
询价
CHINAXYJ
23+
SMD
9868
专做原装正品,假一罚百!
询价
更多PSHM40-06供应商 更新时间2024-9-20 15:00:00