| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
StandardCMOSprocess. | APLUSAPLUS APLUS | APLUS | ||
tandardCMOSprocess | APLUSAPLUS APLUS | APLUS | ||
Abroadportfolioofhighperformance,best-in-classSerialMemoryProductstomeetallyourdesignrequirements. | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
verylowcostvoiceandmelodysynthesizerwith4-bitsCPU GeneralDescription TheAPExx04seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)output,etc.Theaudiosynthesizercontainson | APLUSAPLUS APLUS | APLUS | ||
THESLIMPOWERRELAY FEATURES •Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting •Wideswitchingcapacity:100mA/12VDC-6A/250VAC •Highsensitivity:170mW •Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PULSE |
2021+ |
DIP/SOP |
16500 |
十年专营原装现货,假一赔十 |
询价 | ||
PULSE-普思 |
24+25+/26+27+ |
RJ45.连接器 |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NA |
22+ |
11370 |
原装现货假一赔十 |
询价 | |||
NA |
22+ |
N/A |
354000 |
询价 | |||
LAMBDA |
23+ |
94 |
专业模块销售,欢迎咨询 |
询价 | |||
16+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
询价 | |||
HERMETRON |
26 |
公司优势库存 热卖中! |
询价 | ||||
TDK-Lambda |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TDK/东电化 |
22+ |
MODULE |
90000 |
百分百原装正品 价格优势 |
询价 | ||
LAMBDA |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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