PE6086

50 Ohm 0.5 Watts Precision 2.92mm Male RF Load With Chain Up To 40 GHz

PE6086

0.5 Watt RF Load with Chain Up to 40 GHz with 2.92mm Male Passivated Stainless Steel

PE6086_16

0.5 Watt RF Load with Chain Up to 40 GHz with 2.92mm Male Passivated Stainless Steel

6086

ESDWristStrapTester

AN-6086

DesignConsiderationforInterleavedBoundaryConductionModePFC

BD6086GU

SiliconMonolithicIntegratedCircuit

BD6086GU

13LEDsALC*FlashandIllumination

C6086

X-RayCCDCamera

TheC6086seriesisacompact,lightweight,highresolutionX-rayCCDcamera.ItconsistsofanX-raysensitivescintillator(P43)coatedonataperedfiberopticbundledirectcoupledtoaCCDcamera.TheC6086-90cameracontrollerincorporatesa10-bitA/Dconverterforpreciseimageacquisition

C6086NL

DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

C6086NL

BROADBAND:RF&WIRELESS

RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEB6086

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=70A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V.

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

CEM6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.