零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
NCHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETSTRANSISTORS FEATURE NchannelinaplasticTO-3PMLpackage. CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV®MOSFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: •CommonEmitter •PG=9.5dBat35W/860MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | ASI | ||
CrystalFilter | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
NegativepowersupplyforCCDcameraofmobilephones | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Ultra-compactIndustrialPC | BECKHOFFBECKHOFF INC 倍福自动化 | BECKHOFF | ||
Excellentsignalintegrityathighfrequencies | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,52A,RDS(ON)=11mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,40A,RDS(ON)=15.5mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PIXELPLUS原现 |
2138+ |
CLCC-40 |
6900 |
询价 | |||
PIXELPLUS |
1728+ |
CLCC-40 |
6528 |
只做进口原装正品假一赔十! |
询价 | ||
PIXELPL |
23+ |
CLCC-40 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
PIXELPLUS |
23+ |
CLCC40 |
102 |
原装现货假一赔十 |
询价 | ||
PIXELPL |
21+ |
CLCC40 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
PIXELPLUS |
1517+ |
CLCC40 |
102 |
刚到现货加微13425146986 |
询价 | ||
PIXELPLUS |
20+ |
CLCC40 |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
PIXELPLUS |
21+ |
CLCC40 |
2000 |
原装现货 |
询价 | ||
PIXELPLUS |
22+ |
CLCC40 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
PIXELPLUS原现 |
2339+ |
CLCC-40 |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 |
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