General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• High collector current gain (hFE) at high IC

• Higher efficiency leading to less heat genereation

• High temperature applications up to 175 °C

• AEC-Q101 qualified

Applications

• Power management

• DC-to-DC conversion

• Supply line switches

• Battery charger switches

• Peripheral drivers

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver

PBSS5250TH属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安世半导体(中国)有限公司制造生产的PBSS5250TH晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。