DESCRIPTION

PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package

• Improved thermal behaviour due to flat leads

• Self alignment during soldering due to straight leads

• Low collector-emitter saturation voltage

• High current capability

APPLICATIONS

• General purpose switching and muting

• LCD back lighting

• Supply line switching circuits

• Battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS5140V属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。恩智浦半导体公司制造生产的PBSS5140V晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。