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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB50N06	文件：636.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB50N06G	文件：587.93 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED50N06	文件：423.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED50N06	文件：883.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,36A,RDS(ON)=18mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED50N06G	文件：508.65 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06	文件：636.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06	文件：391.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP50N06	文件：1.14917 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP50N06	文件：1.4536 Mbytes Page：6 Pages	50A,60VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
CEP50N06G	文件：587.93 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU50N06	文件：423.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU50N06	文件：991.61 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CEU50N06	文件：1.01405 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU50N06	文件：883.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,36A,RDS(ON)=18mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU50N06G	文件：508.65 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CHM50N06NPT	文件：239.86 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT50Ampere FEATURE Smallpackage.(D2PAK) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO
CHM50N06PAPT	文件：198.76 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT36Ampere FEATURE Smallpackage.(TO-252A) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO
CJP50N06	文件：2.80683 Mbytes Page：4 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CJP50N06	文件：1.4536 Mbytes Page：6 Pages	50A,60VHeatsinkPlanarN-ChannelPowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
CJU50N06	文件：1.01406 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	P50N06FI	ST	23+	TO-TO-220	35400	全新原装真实库存含13点增值税票!	询价
深圳市威尔健半导体有限公司	P50N06FI	NEXPERIA/安世	23+	SOD128	69820	终端可以免费供样,支持BOM配单!	询价
深圳市国宇半导体科技有限公司	P50N06FI	ST/意法	23+	TO-220	10000	公司只做原装正品	询价
深圳市汇莱威科技有限公司	P50N06FI	ST	2320+	TO220-3	562000	16年只做原装原标渠道现货终端BOM表可配单提供样品	询价
中科航电（深圳）电子集团有限公司	P50N06FI	ST		TO-220	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市华芯源电子有限公司	P50N06FI	ST/意法	22+	TO-220	96253	终端免费提供样品可开13%增值税发票	询价
深圳和润天下电子科技有限公司	P50N06FI	ST/意法	22+	TO-220	96253		询价
深圳市恒创达实业有限公司	P50N06L	ST/进口原	17+	TO-220	6200		询价
深圳兆威电子有限公司	P50N06PA	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市九方航科技有限公司	P50N06PA	VBSEMI	19+	TO-220	29600	绝对原装现货,价格优势!	询价

更多P50N06C供应商更新时间2024-6-1 15:30:00

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