| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoise,WideBandwidth,MEMSAccelerometer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
StandardCMOSprocess. | APLUSAPLUS APLUS | APLUS | ||
tandardCMOSprocess | APLUSAPLUS APLUS | APLUS | ||
Abroadportfolioofhighperformance,best-in-classSerialMemoryProductstomeetallyourdesignrequirements. | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
verylowcostvoiceandmelodysynthesizerwith4-bitsCPU GeneralDescription TheAPExx04seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)output,etc.Theaudiosynthesizercontainson | APLUSAPLUS APLUS | APLUS | ||
THESLIMPOWERRELAY FEATURES •Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting •Wideswitchingcapacity:100mA/12VDC-6A/250VAC •Highsensitivity:170mW •Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIKOS |
10+ |
SOP-8 |
1188 |
库存刚更新加微13425146986 |
询价 | ||
NIKOS |
22+ |
SOP-8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
NIKO-SEM/尼克森 |
22+ |
SOP8 |
15238 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
NIKOS |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
询价 | ||
原厂正品 |
23+ |
TO-263 |
60000 |
原装正品,假一罚十 |
询价 | ||
NIKO-SEM |
2019+ |
TO-263 |
42500 |
只做原装正品假一赔十优势供应 |
询价 | ||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
N |
23+ |
TO263 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
NIKOS |
23+ |
TO-263 |
15000 |
一级代理原装现货 |
询价 | ||
NIKOS |
21+ |
TO-263 |
1170 |
原装现货假一赔十 |
询价 |
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