首页 >OPA2322SAIDGKR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
OPA2322SAIDGKR | 20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier with Shutdown | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | |
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
2A550k/1.1MHzSynchronousPWM | AIC AIC | AIC | ||
N-Channel30-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Capableof1.8Vgatedrive,SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A,RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A,RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •20V/1.5A, RDS(ON)=195mΩ(typ.)@VGS=4.5V RDS(ON)=295mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC |
详细参数
- 型号：
OPA2322SAIDGKR
- 制造商：
TI
- 制造商全称：
Texas Instruments
- 功能描述：
20-MHz, Low-Noise, 1.8-V, RRI/O, CMOS Operational Amplifier with Shutdown
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TexasInstruments |
18+ |
ICOPAMPGPRRCMOS20MHZ10MS |
6580 |
公司原装现货/欢迎来电咨询! |
询价 | ||
TexasInstruments |
10-VSSOP |
8500 |
绝对原装正品!假一罚十!放大器专业分销商! |
询价 | |||
TI |
22+ |
VSSOP10 |
44026 |
原装正品现货 |
询价 | ||
TI |
1937+ |
MSOP10 |
9852 |
只做进口原装正品现货!或订货假一赔十! |
询价 | ||
TI |
16+ |
VSSOP |
10000 |
原装正品 |
询价 | ||
TI/德州仪器 |
18+ |
VSSOP |
8257 |
向鸿专营TI ADI,代理渠道可订货 |
询价 | ||
Ti |
20+ |
10TFSOP |
53650 |
TI原装主营-可开原型号增税票 |
询价 | ||
Texas Instruments |
21+ |
10-VSSOP |
53200 |
一级代理/放心采购 |
询价 | ||
TI |
16+ |
VSSOP |
10000 |
原装正品 |
询价 | ||
TI/德州仪器 |
20+ |
MSOP-10 |
5000 |
原装正品 |
询价 |
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