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CC113L

ValueLineReceiver

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

OP113FS

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

OP113FS

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

GENERALDESCRIPTION TheOPx13familyofsingle-supplyoperationalamplifiersfeaturesbothlownoiseanddrift.Ithasbeendesignedforsystemswithinternalcalibration.Oftentheseprocessor-basedsystemsarecapableofcalibratingcorrectionsforoffsetandgain,buttheycannotcorrectfort

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

OP113FS-REEL

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

OP113FSZ

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

OP113FSZ-REEL

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

OPI113

OpticallyCoupledIsolator

Optek

TT Electronics/Optek Technology

OPI113

OPTICALLYCOUPLEDISOLATORS

Description: EachOptoisolatorinthisdatasheetcontainsaninfraredLightEmittingDiode(LED)andaNPNsiliconPhotosensor.TheOPI110andOPI1264deviceshave890nmLightEmittingDiode(LED)andNPNphototransistorsensor,whereastheOP113hasa890nmLEDandaphotodarlingtonsensor.T

Optek

TT Electronics/Optek Technology

PBRN113E

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBRN113E

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113E_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113ET

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBRN113ET-Q

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN113Z

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    OP113FP

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    SINGLE LO-NOISE LO-DRIFT - Bulk

供应商型号品牌批号封装库存备注价格
AD可看货
DIP8
2021+
67500
热销型号 原装现货自家库存
询价
ADI(亚德诺)
23+
PDIP-8
7793
支持大陆交货,美金交易。原装现货库存。
询价
5
询价
AD
2022
DIP-8
5500
原厂原装正品,价格超越代理
询价
ad
22+
N/A
6980
原装现货,可开13%税票
询价
PMI
23+
DIP8
8650
受权代理!全新原装现货特价热卖!
询价
AD/PMI
23+
DIP8
12300
全新原装真实库存含13点增值税票!
询价
AD可看货
21+
DIP8
80000
只做正品原装现货
询价
AD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AD/PMI
21+
DIP8
9585
原装现货。假一赔十
询价
更多OP113FP供应商 更新时间2024-6-7 16:19:00