SSI122

4-Channelthinfilmread/writedevice

SSP-122BHT

H=1mmPaperSlideSwitches

SSP-122RVT

H=1mmPaperSlideSwitches

STM122N

SuperhighdensecelldesignforlowRDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

SXK122

Polystyrene-Foil/AxialLeads

SXL122

Polystyrene-Foil/AxialLeads

T122

TIRISTORIITRIJACI

TCK122

CommonModeChoke

TCK-122

CommonModeChoke

TD122N

Netz-Thyristor-ModulPhaseControlThyristorModule

TG-122

HIGHENERGYSPARKGAPDEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

THS122

HIGHSTABILITYMOTORCONTROL.DIGITALTACHOMETER.CRANKSHAFTPOSITIONSENSOR.

TIP122

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral−purposeamplifierandlow−speedswitchingapplications. FEATURES: •Collector−EmitterSustainingVoltage− VCEO(sus)=60V(Min)−TIP120,TIP125 =80V(Min)−TIP121,TIP126 =100V(Min)−TIP122,TIP127 •LowColl

TIP122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

TIP122

DARLINGTON5AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium-PowerComplementarySiliconTransistors ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@100mAdc VCEO(sus)=60Vdc(Min)—TIP12

TIP122

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP125,TIP126andTIP127 ●65Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●MinimumhFEof1000at3V,3A

TIP122

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,HAMMERDRIVER,PULSEMOTORDRIVER)

SWITCHINGAPPLICATIONS. HAMMERDRIVER,PULSEMOTORDRIVERAPPLICATIONS. FEATURES •HighDCCurrentGain:hFE=1000(Min.)atVCE=3V,IC=3A. •HighCollectorBreakdownVoltage:VCEO=100V(Min.)

TIP122

PowerDarlingtonsforLinearandSwitchingApplications

TIP120,121,122NPNPLASTICPOWERTRANSISTORS TIP125,126,127PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP122

MediumPowerLinearSwitchingApplications

Features •MediumPowerLinearSwitchingApplications •ComplementarytoTIP125/TIP126/TIP127

TIP122

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP125/126/127 APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications.