NVMFWS1D5N08X

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features LowQRR,SoftRecoveryBodyDiode LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses AECQualifiedandPPAPCapable TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications SynchronousRectification(

NVMFWS1D5N08XT1G

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features LowQRR,SoftRecoveryBodyDiode LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses AECQualifiedandPPAPCapable TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications SynchronousRectification(

NTBLS1D5N08MC

MOSFET-Power,SingleN-Channel,TOLL80V,1.53m,298A

NTMFWS1D5N08X

MOSFET-Power,SingleN-Channel,STDGate,SO8FL-HEFET80V,1.5m,247A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications •SynchronousRectification(SR)inDC−DCandAC−DC •Primary

NTMTS1D5N08H

MOSFET-Power,SingleN-Channel80V,1.5m,255A

NTMTS1D5N08MC

MOSFET-Power,SingleN-Channel,DFNW880V,1.56m,287A

NTMTSC1D5N08MC

MOSFET-Power,SingleN-Channel,DFNW8,DUALCOOL80V,1.56m,287A

NVMTS1D5N08H

MOSFET-Power,SingleN-Channel80V,1.4m,273A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant