NVD6416ANT4G

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVD6416ANT4G-VF01

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NTD6416ANT4G

N-ChannelPowerMOSFET100V,17A,81m

NTD6416ANT4G

MOSFET–Power,N-Channel100V,17A,81m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NTD6416ANT4G

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)