首页 >NVD6415ANT4G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NVD6415ANT4G | MOSFET – Power, N-Channel 100 V, 23 A, 55 m Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NVD6415ANT4G | N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
N-ChannelPowerMOSFET100V,23A,55m廓 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
MOSFET–Power,N-Channel100V,23A,55m Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
NVD6415ANT4G
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ON |
2020+ |
TO-252 |
53000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-263(D |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON/安森美 |
21+ |
TO-252 |
30000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
onsemi |
21+ |
PG-SOT223-3 |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
O |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 |
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