首页 >NVBG080N120SC1>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NVBG080N120SC1 | Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NVBG080N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??N?륝hannel,SiliconCarbide1200V,80m | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??N?륝hannel,SiliconCarbide1200V,80m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
D2PAK7 (TO-263-7L HV) |
100000 |
全新原装 |
询价 | ||
onsemi |
24+ |
D2PAK-7 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ONN |
23+ |
N/A |
761 |
原装原装原装哈 |
询价 | ||
onsemi(安森美) |
23+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
23+ |
原厂原封 |
800 |
订货1周 原装正品 |
询价 | ||
ONSEMI |
22+ |
761 |
原装实报价优,Q,1296807626 |
询价 | |||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON |
22+ |
NA |
661 |
原装正品支持实单 |
询价 | ||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 | ||
ONN |
23+ |
N/A |
1000 |
全新原装亏本出13157115792 |
询价 |
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