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PDTA123ES

PNPresistor-equippedtransistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123ES

PNPresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123ES

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ES

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ES

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ET

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ET

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ET

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123ET

PNPresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123ET

PNPresistor-equippedtransistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123ET

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123ET

PNPresistor-equippedtransistor

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123EU

PNPresistor-equippedtransistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123EU

PNPresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123EU

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PDTA123EU

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EU

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123EU

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTA123J

PNPresistor-equippedtransistors;R1=2.2k廓,R2=47k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PDTA123J

PNPresistor-equippedtransistors;R1=2.2k,R2=47k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

供应商型号品牌批号封装库存备注价格
NUVOTON/新唐
21+
65200
询价
NUVOTON/新唐
20+
SMD
880000
明嘉莱只做原装正品现货
询价
NUVOTON/新唐
2406+
1850
诚信经营!进口原装!量大价优!
询价
Korg Nutube
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
AMIS
05/06+
DIP28
1232
全新原装100真实现货供应
询价
AMIS
2339+
DIP-28
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
AMIS
23+
DIP28
9280
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
AMIS
6000
面议
19
DIP28
询价
AMIS
2023+
DIP-28
48000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
AMIS
2020+
DIP28
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多NUTINY-SDK-NUC123供应商 更新时间2024-6-4 14:10:00