NTHL020N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

NTHL020N090SC1

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

NTHL020N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

NTHL020N090SC1D

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

NTBG020N090SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L900V,20m,112A

NTBG020N090SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=200nC) •LowEffectiveOutputCapacitance(Coss=295pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlev

NVBG020N090SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L900V,20m,112A

NVBG020N090SC1

SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=200nC) •LowEffectiveOutputCapacitance(typ.Coss=295pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSComplia

NVHL020N090SC1

SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=196nC) •LowEffectiveOutputCapacitance(typ.Coss=296pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwit

NVHL020N090SC1

MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A