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NTE6362

Silicon Power Rectifier Diode, 300 Amp

Features: ●DiffusedDiode ●HighVoltageRatingsupto1600Volts ●HighSurgeCurrentCapabilities ●AvailableinAnode–to–CaseorCathode–to–CaseStyle

NTE

NTE Electronics, Inc

6362

Component12X1PAIR

ALPHAWIREAlpha Wire

阿尔法电线

6362

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

APP

Anderson Power Products, Inc.

6362-C

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

6362-M

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

6362-V

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AN6362

VTRCOLORAFCCIRCUIT

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

AN6362S

VTRCOLORAFCCIRCUIT

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

AON6362

30VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

CEA6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,5.2A,RDS(ON)=46mW@VGS=10V. RDS(ON)=52mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,20.7A,RDS(ON)=45mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=52mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,6A,RDS(ON)=43mW@VGS=10V. RDS(ON)=49mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,20.7A,RDS(ON)=45mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=52mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHA6362-QXG

17.7-19.7GHzPowerAmplifier

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

DFD6362

FullyAutomaticDicingSaw

DISCODISCO Corporation

迪斯科公司

E6362

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

APP

Anderson Power Products, Inc.

EN6362QI

DC-DCBuckwithIntegratedInductor

AlteraAltera Corporation

阿尔特阿尔特拉公司

EPE6362G

10Base-TInterfaceModulewithEnhancedCommonModeAttenuation

PCA

PCA Electronics, Inc.

HL6362MG

LowOperatingCurrentVisibleLaserDiode

Description TheHL6362MG/63MGare0.63µmbandAlGaInPlaserdiodeswithamulti-quantumwell(MQW)structure.Theyare suitableaslightsourcesforlaserdisplay,laserscannersandopticalequipmentformeasurement. Features •Visiblelightoutput:640nmTyp •Singlelongitudinalmode

OPNEXTOpnext. Inc.

Opnext. Inc.

L6362

FullyintegrateddevicetransceiverIC

Description TheL6362isamonolithicdualpushpullTransceiverfullycomplianttoPHY2(3wires)supportingCOM1(4.8kbaud),COM2(38.4kbaud)andCOM3(230.4kbaud)modes.C/QandI/Qoutputstagesareprogrammable:high-side,low-sideorpush-pull;alsocut-offcurrentandcutoffcurrentd

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    NTE6362

  • 制造商:

    NTE Electronics

  • 功能描述:

    RECTIFIER - 1400PRV 300A CATHODE CASE DO9

  • 功能描述:

    Diode 1.4KV 300A 2-Pin DO-9

供应商型号品牌批号封装库存备注价格
5
全新原装 货期两周
询价
NTE
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
2022+
1
全新原装 货期两周
询价
23+
N/A
67000
一级代理放心采购
询价
NTE
39602
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
23+
N/A
56000
一级代理放心采购
询价
NTE
24+25+/26+27+
TO-92-3
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多NTE6362供应商 更新时间2024-6-19 16:06:00