零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NTE472 | Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz Description: TheNTE472isasiliconNPNtransistordesignedforamplifier,frequencymultiplieroroscillatorapplicationsinmilitary,mobilemarineandcitizensbandequipment.Suitableforuseasoutputdriverorpre–driverstagesinVHFandUHFequipment. Features: •Specified12.5 | NTE NTE Electronics, Inc | NTE | |
3M??AluminumFoilTape427 | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
THREADEDROUNDSTANDOFF | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
PrecisionPotentiometer/PositionSensor | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | BITECH | ||
CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10) | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
472SeriesHighSpeedCardEdgeConnectors|BoardtoBoard0.8mmPitch|VerticalSMT|Plug Features LowProfileforSpaceSaving InsertionLoss:DifferentialPairSignaling19Gbps@-3dB Availablein100and150contacts AvailableinVerticalSMTandRightAngleSMT PCIe3.0Compliant Application:Server,DataStorage | EDACEDAC, All Rights Reserved. 亚得电子亚得电子(东莞)有限公司 | EDAC | ||
GASDISCHARGETUBE-9,5x11,5mm | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | Littelfuse | ||
NTCThermistors,LowThermalGradientLugSensors | VishayVishay Siliconix 威世科技 | Vishay | ||
CERAMICDISCCAPACITORSAFETYRECOGNIZED | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
N-Channel20-V(D-S)175CMOSFET FEATURES •TrenchFETPowerMOSFET •175°CMaximumJunctionTemperature •100RgTested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD472usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD472isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelSDMOSTMPOWERTransistor GeneralDescription •LatestTrenchPowerMOSFETtechnology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant Application •DC/DCConvertersinComputing •IsolatedDC/DCConvertersinTelecomandIndustrial ProductSummary VDS | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSDMOSTMPOWERTransistor GeneralDescription •LatestTrenchPowerMOSFETtechnology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant Application •DC/DCConvertersinComputing •IsolatedDC/DCConvertersinTelecomandIndustrial ProductSummary VDS | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD472usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD472isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
详细参数
- 型号:
NTE472
- 制造商:
NTE Electronics
- 功能描述:
N-SI-RF DR & PO-1.8W
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NTE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
NTE |
1923+ |
原厂封装 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
询价 | ||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
NTE |
TO-59 |
39386 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
23+ |
N/A |
58300 |
一级代理放心采购 |
询价 | |||
23+ |
N/A |
65700 |
一级代理放心采购 |
询价 |
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