NTE465中文资料PDF规格书
NTE465规格书详情
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . 800mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . .. . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . –55° to +175°C
产品属性
- 型号:
NTE465
- 制造商:
NTE Electronics
- 功能描述:
MOSFET-N CHANNEL GEN PURP
- 功能描述:
N CHANNEL MOSFET, 25V, 3mA, TO-72; Transistor
- Polarity:
N Channel; Continuous Drain Current
- Id:
3mA; Drain Source Voltage
- Vds:
25V; On Resistance
- Rds(on):
300ohm; Rds(on) Test Voltage
- Vgs:
-10V; Threshold Voltage Vgs
- Typ:
-5V ;RoHS
- Compliant:
Yes
- 功能描述:
Trans MOSFET N-CH 25V 4-Pin TO-72