| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NTE2318 | Silicon NPN Transistor High Voltage, High Speed Switch Description: TheNTE2318isahigh–voltage,high–speed,switchingNPNtransistorwithaninternaldamperdiodeinaTO218typepackage.Thisdeviceisspecificallydesignedforuseinlargescreencolordeflectioncircuits. Features: ●Collector–EmitterVoltage:VCE=1500V ●Collector–Emitter | NTE NTE Electronics, Inc | NTE | |
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
LowVoltageandPowerApplications | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
LowVoltageandPowerApplications | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
MOSFETN-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheAM2318isavailableinSOT-23package. FEATURES 20V/2.0A, RDS(ON)=80mΩ(MAX)@VGS=4.5V RDS(ON)=90mΩ(MAX)@VGS=2.5V SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23Package APPLICATION PowerManagement | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel30-V(D-S)MOSFET KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •WhiteLEDboostconverters •AutomotiveSystems •IndustrialDC/DCConversionCircuits | AnalogPower Analog Power | AnalogPower | ||
600mAULDOREGULATORWITHENABLE | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
1AULDOREGULATORWITHENABLE | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
Capableof2.5VGateDrive,SmallOutlinePackage,SurfaceMountDevice | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
FastSwitchingPerformance | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Capableof2.5VGateDrive,SmallOutlinePackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •30V/3A, RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=60mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentand | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/3A, RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=60mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentand | ANPECAnpec Electronics Corp 茂达电子 | ANPEC |
详细参数
- 型号：
NTE2318
- 制造商：
NTE Electronics
- 功能描述：
TO-218 NPN HI-V SW
- 功能描述：
Trans Digital BJT NPN 700V 15A 3-Pin(3+Tab) TO-218
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
新 |
144 |
全新原装 货期两周 |
询价 | ||||
2022+ |
140 |
全新原装 货期两周 |
询价 | ||||
NTE |
-3 |
39265 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NTE |
24+ |
DIP14 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NTE |
23+ |
65480 |
询价 | ||||
NTE |
24+25+/26+27+ |
TO-3-3 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NTE |
23+ |
TO-3PL |
18000 |
询价 |
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