首页 >NSI6601C-DSPR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ComfortProbewithRemovable4mmBananaPlugAdapter | POMONA Pomona Electronics | POMONA | ||
1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoiseJFETAmplifiers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VComplementaryMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-andP-ChannelV(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
NPChannelMOSFET Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V) | UMWUMW Rightway Semiconductor Co., Ltd. 友台友台半导体 | UMW | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule | ANADIGICS ANADIGICS | ANADIGICS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-Channel60V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NOVOSENSE/纳芯微 |
21+ |
SOIC8N |
5000 |
保证原装正品,需要直接联系张小姐,13544103396 |
询价 | ||
NOVOSENSE/纳芯微 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
NOVOSENSE |
22+ |
SMD |
5000 |
询价 | |||
纳芯微电子 |
22+ |
SOP8 |
6 |
只做原装 |
询价 | ||
NOVOSENSE/纳芯微 |
23+ |
SOP8 |
45000 |
纳芯微全系列在售,可出样品 |
询价 | ||
纳芯微电子 |
21+ |
SOW8 |
150 |
全新原装鄙视假货15118075546 |
询价 | ||
23+ |
N/A |
76800 |
一级代理放心采购 |
询价 | |||
6000 |
询价 | ||||||
NOVOSENSE |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
NOVOSENSE(纳芯微) |
10 |
纳芯微授权代理,自营现货 |
询价 |
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