This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very High Blocking Voltage − 200 V

• 150°C Operating Junction Temperature

• Guard−Ring for Stress Protection

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• This is a Pb−Free Device

Mechanical Charactersistics

• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Cathode Polarity Band

• Device Meets MSL 1 Requirements

• ESD Ratings: Machine Model = A

ESD Ratings: Human Body Model = 1B

NRVBAF3200T3G属于分立半导体产品 > 二极管 - 整流器 - 单。安森美半导体公司制造生产的NRVBAF3200T3G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。