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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
NKH11012A	文件：663.21 Kbytes Page：4 Pages	Thyristor/Diode	NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司	NELLSEMI
11012	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
11012-R	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
ACV11012	文件：89.05 Kbytes Page：4 Pages	AUTOMOTIVELOWPROFILEMICRO-ISORELAYHeadlights	PanasonicPanasonic Corporation 松下松下电器	Panasonic
ACV11012	文件：134.18 Kbytes Page：4 Pages	AUTOMOTIVELOWPROFILEMICRO-ISO/MICRO-280RELAY FEATURES •Lowprofile: 22.5mm(L)×15mm(W)×15.7mm(H).886inch(L)×.591inch(W)×.618inch(H) •Lowtemperaturerise Terminaltemperaturehasbeenreducedcomparedwithusingourconventionalproduct •Lowsoundpressurelevel Noiselevelhasbeenreducedapprox.10dBcom	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
ADJ11012	文件：142.7 Kbytes Page：9 Pages	1-pole/2-pole16ApolarizedpowerrelaysVarietyofcontactarrangements FEATURES 1.Varietyofcontactarrangements Widelineupof1FormC,1FormA,1FormB,2FormC,2FormA,2FormB,1FormA1FormB. 2.Latchingoperation Latchingviaapolarizedmagneticcircuitstructureallowsremoteoperationandlowerenergyconsumption 3.Compactwithhighc	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AHN11012	文件：136.5 Kbytes Page：6 Pages	Slimandcompactsize	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
AHN11012	文件：136.52 Kbytes Page：6 Pages	Relayforcontrolpanelof1c10A,2c5Aand1a16A	PanasonicPanasonic Corporation 松下松下电器	Panasonic
EB-A11012-XX-B	文件：79.49 Kbytes Page：1 Pages	EUROBLOCK	ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司	ADAM-TECH
L-11012	文件：26.47 Kbytes Page：1 Pages	CURRENTSENSEINDUCTORS	RHOMBUS-IND Rhombus Industries Inc.	RHOMBUS-IND
MJ11012	文件：54.14 Kbytes Page：1 Pages	PowerTransistors PowerTransistors TO-3Case(Continued)	CentralCentral Semiconductor Corp 美国中央半导体	Central
MJ11012	文件：121.43 Kbytes Page：4 Pages	High-CurrentComplementarySiliconTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJ11012	文件：68.41 Kbytes Page：4 Pages	High-CurrentComplementarySiliconTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJ11012	文件：19.71 Kbytes Page：1 Pages	NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS) SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS	WINGSWing Shing Computer Components Wing Shing Computer Components	WINGS
MJ11012	文件：140.07 Kbytes Page：3 Pages	POWERTRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun	MOSPEC MOSPEC	MOSPEC
MJ11012	文件：157.15 Kbytes Page：4 Pages	30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C	MotorolaMotorola, Inc 摩托罗拉	Motorola
MJ11012	文件：157.15 Kbytes Page：4 Pages	DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJ11012	文件：51.91 Kbytes Page：2 Pages	iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=20A •LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A •ComplementtoTypeMJ11011 APPLICATIONS •Designedforuseasoutputdevicesincomple	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJ11012	文件：96.68 Kbytes Page：2 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: HighGainDarlingtonPerformance HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
MJ11012G	文件：121.43 Kbytes Page：4 Pages	High-CurrentComplementarySiliconTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	NKH135/12	NELL	16+	MODULE	2100	一级代理/全新原装现货供应!!!	询价
贸泽芯城（深圳）电子科技有限公司	NKH135/12	NELL		MODULE	30000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
浙江永芯科技有限公司	NKH135/12	NPSEMI	23+	标准封装	5000	原厂授权一级代理 IGBT模块可控硅晶闸管熔断器质保	询价
深圳市鹏顺微电子科技有限公司	NKH135/16A	NSL	2022+	可控硅MODULE模块MODULE	1500	长期供应,价格优势,全新原装,支持实单,	询价

更多NKH11012A供应商更新时间2024-6-3 16:34:00

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