Ignition IGBT

20 A, 450 V, N−Channel D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• D2PAK Package Offers Smaller Footprint for Increased Board Space

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load

• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• This is a Pb−Free Device

Applications

• Ignition Systems

NGB8245N属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。力特公司制造生产的NGB8245N晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。