EMBA5P06J

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐60V RDSON(MAX.)150mΩ ID‐2.2A Pb‐FreeLeadPlating&HalogenFree

EMBA5P06P

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐60V RDSON(MAX.)150mΩ ID‐2.4A Pb‐FreeLeadPlating&HalogenFree

LG5P06

HighPowerandcurrenthandingcapability

MTD5P06E

TMOSPOWERFET5.0AMPERES60VOLTSRDS(on)=0.55OHM

TMOSE-FETPowerFieldEffectTransistorsDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MTD5P06V

TMOSPOWERFET5AMPERES60VOLTSRDS(on)=0.450OHM

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MTD5P06V

PowerMOSFET5Amps,60VoltsP?묬hannelDPAK

MTP5P06V

P?묬hannelPowerMOSFET

MTP5P06V

TMOSPOWERFET5AMPERES60VOLTSRDS(on)=0.450OHM

TMOSVPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

NTD5P06V

PowerMOSFET5Amps,60VoltsP?묬hannelDPAK

PJW5P06A

60VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-5A

PJW5P06A-AU

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@4A