NESG210719-T1-A超小型管规格书供应价格CEL-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业
NESG210719-T1	文件：114.56 Kbytes Page：3 Pages	NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NESG210719-T1	文件：124.41 Kbytes Page：10 Pages	NPNSiGeRFTransistorforLowNoise,High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NESG210719-T1	文件：1.1949 Mbytes Page：9 Pages	NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAmplification3-PinUltraSuperMinimold(19,1608PKG)	CEL California Eastern Laboratories
NESG210719-T1-A	文件：124.41 Kbytes Page：10 Pages	NPNSiGeRFTransistorforLowNoise,High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NESG210719-T1-A	文件：1.1949 Mbytes Page：9 Pages	NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAmplification3-PinUltraSuperMinimold(19,1608PKG)	CEL California Eastern Laboratories

更多NESG210719-T1-A超小型管供应商更新时间2024-4-27 14:00:00