NESG204619-T1-A资料datasheet下载库存现货-114ic电子网

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NESG204619-T1-A	文件：116.48 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NESG204619-T1-A	文件：302.01 Kbytes Page：10 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NESG204619-T1-A	文件：320.74 Kbytes Page：4 Pages	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION	CEL California Eastern Laboratories	CEL
NESG204619-T1	文件：302.01 Kbytes Page：10 Pages	NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

更多NESG204619-T1-A供应商更新时间2024-6-17 15:24:00