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NESG2031M16-T3

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-T3

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-T3-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-T3-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-T3-A

HIGHFREQUENCYTRANSISTOR

CEL

California Eastern Laboratories

供应商型号品牌批号封装库存备注价格
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
NEC
6000
面议
19
SMD
询价
NEC
2008++
SMD
16200
新进库存/原装
询价
RENESAS/瑞萨
SOT-523
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
RENESAS-瑞萨
24+25+/26+27+
SOT-523
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
RENESAS/瑞萨
23+
SOT-523
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
CEL
17+
原厂原装
5000
原装正品
询价
CEL
16+
SOT-523
15000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
CEL
20+
SOT-523
36800
原装优势主营型号-可开原型号增税票
询价