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NESG2021M16中文资料PDF规格书
NESG2021M16规格书详情
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications
NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2021M16
- 功能描述：
射频硅锗晶体管 RO 551-NESG2021M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-343 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
20+ |
SOT343 |
49000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
RENESAS |
12+ |
6-PINM |
5427 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS/瑞萨 |
2022 |
SOT343 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS |
6-PINM |
9497 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
NEC |
1742+ |
SOT343 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
CEL |
17+ |
原厂原封 |
4000 |
原装正品 |
询价 | ||
RENESAS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
询价 | ||
RENESAS-瑞萨 |
24+25+/26+27+ |
6-PINM |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
