NE651R479A-T1-A技术资料参数行情报价瑞萨-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
NE651R479A-T1-A	文件：501.77 Kbytes Page：11 Pages	MEDIUM POWER GaAs HJ-FET DESCRIPTION NECsNE651R479AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering0.5Wattsofoutputpower(CW)at3.5V,and1Wattofoutputpower(CW)at5	CEL California Eastern Laboratories	CEL
NE651R479A-T1-A	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：4-SMD，扁平引线类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 8V 1.9GHZ 79A	CEL California Eastern Laboratories	CEL
NE651R479A-T1	文件：69.19 Kbytes Page：8 Pages	0.4WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobilecommunicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionandasadriveramplifi	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE651R479A-T1	文件：199.45 Kbytes Page：11 Pages	N-CHANNELGaAsHJ-FET 0.4WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellent	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

更多NE651R479A-T1-A供应商更新时间2024-5-21 14:15:00