NDP6020中文资料PDF规格书
NDP6020规格书详情
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
产品属性
- 型号:
NDP6020
- 功能描述:
MOSFET DISC BY MFG 2/02
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NS/国半 |
23+ |
NA/ |
6750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
STM |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FSC/ON |
23+ |
原包装原封□□ |
7612 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
询价 | ||
FSC |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
National |
23+ |
TO220 |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
ONSemiconductor |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ON |
23+ |
TO-220 |
28610 |
询价 | |||
FAIRCHILD |
23+ |
TO-TO-2203L |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
NS/国半 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |